ABSTRACT

In the present work, the Cu2ZnSnS4 (CZTS) thin films are prepared by spin coating technique. The phase purity of prepared film is confirmed by X-ray diffractometer technique. The CZTS thin film shows single phase of kesterite structure with a dominant peak at 28.7° corresponds to the plane (112) which also confirmed by Raman peak at 331 cm-1. The coefficient of absorption and direct band gap values of 104 cm-1 and 1.50 eV, respectively are determined by UV-Visible spectrophotometer technique. The optical results show that prepared thin film is ideal for solar cell applications. The SEM images shows that a uniform and homogeneous film is prepared which has an average particle size of 36.0 nm. Furthermore, the surface morphology and roughness determined by the AFM technique confirm that a smooth thin film of CZTS is prepared. The Hall measurements showed the p-type conductivity with carrier concentration ~ 1.55×1016 cm-3, conductivity ~ 65.08×10-2 ?-1cm-1, and hall mobility ~ 26.15 cm2/Vs at room temperature. Therefore the present research work provides a good quality CZTS thin film prepared by sol-gel assisted spin coating technique, which is cost-effective and also applicable for large scale production. Keywords: Thin film, Sol-gel process, X-ray diffraction, Raman, Solar cell
Publication date: 01/12/2023

https://ijbpas.com/pdf/2023/December/MS_IJBPAS_2023_7613.pdf

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https://doi.org/10.31032/IJBPAS/2023/12.12.7613